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| SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High hFE : hFE=100 320. Complementary to KTC3203A. KTA1271A EPITAXIAL PLANAR PNP TRANSISTOR B C A N K MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -35 -30 -5 -800 800 400 150 -55 150 UNIT V V V L G E H F F mA mA mW M 1 2 3 C J D DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification 0:100 200, Y:160 ) TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA IC=-500mA, IB=-20mA VCE=-1V, IC=-10mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz MIN. -30 100 35 -0.5 TYP. 120 19 MAX. -100 -100 320 -0.7 -0.8 V V MHz pF UNIT nA nA V SYMBOL ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob 320 2010. 1. 28 Revision No : 1 1/2 KTA1271A I C - V CE -1k COLLECTOR CURRENT I C (mA) -800 -600 -400 -200 0 COMMON EMITTER Ta=25 C -8 -7 -6 -5 -4 -3 -2 IB =-1mA 0 h FE - I C 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1k COMMON EMITTER VCE =-1V Ta=100 C Ta=25 C Ta=-25 C 0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VCE(sat) (V) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) Ta=100 C Ta=25 C Ta=-25 C I C - V BE COLLECTOR CURRENT I C (mA) -1k -500 -300 -100 -50 -30 -10 -5 -3 -1 -0.2 COMMON EMITTER VCE =-1V COMMON EMITTER I C /I B =25 25 C C 100 -0.4 -0.6 Ta= -25 Ta= Ta= C -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2010. 1. 28 Revision No : 1 2/2 |
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